Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: confocal Raman microscopy
- Title
- Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: confocal Raman microscopy
- Authors
- Belyaev, AE; Strelchuk, VV; Nikolenko, AS; Romanyuk, AS; Mazur, YI; Ware, ME; DeCuir, EA; Salamo, GJ
- Journal
- Semiconductor Science and Technology
- Volume
- 28
- Issue
- 10
- Year
- 2013
- Start Page
- 105011
- ISBN/ISSN
- 0268-1242
- DOI
- 10.1088/0268-1242/28/10/105011
