Modelling the formation of high aspect CdSe quantum wires: axial-growth versus oriented-attachment mechanisms
by Barnard, A. S.; Xu, H. F.; Li, X. C.; Pradhan, N.; Peng, X. G.
Following the recent low temperature synthesis of high quality and single crystal CdSe quantum nanowires, we have used a thermodynamic model to investigate the plausibility of axial-growth and oriented-attachment formation mechanisms. Using surface energies for clean and alkylamine-passivated CdSe surfaces reported elsewhere by Manna et al ( 2005 J. Phys. Chem. B 109 6183), we have compared equilibrium and metastable shapes of CdSe nanowires as a function of aspect ratio and axial orientation for different degrees of surface passivation. In general, the theoretical results support the oriented-attachment of low aspect quantum dots or nanorods, followed by coalescence to form high aspect < 0001 > quantum wires.
- Journal
- Nanotechnology
- Volume
- 17
- Issue
- 22
- Year
- 2006
- Start Page
- 5707-5714
- URL
- https://dx.doi.org/10.1088/0957-4484/17/22/029
- ISBN/ISSN
- 1361-6528; 0957-4484
- DOI
- 10.1088/0957-4484/17/22/029