Crystal Growth and Electronic Properties of LaSbSe
by Pandey, K.; Sayler, L.; Basnet, R.; Sakon, J.; Wang, F.; Hu, J.
The ZrSiS-type materials have gained intensive attentions. The magnetic version of the ZrSiS-type materials, LnSbTe (Ln = Lanthanide), offers great opportunities to explore new quantum states owing to the interplay between magnetism and electronic band topology. Here, we report the growth and characterization of the non-magnetic LaSbSe of this material family. We found the metallic transport, low magnetoresistance and non-compensated charge carriers with relatively low carrier density in LaSbSe. The specific heat measurement has revealed distinct Sommerfeld coefficient and Debye temperature in comparison to LaSbTe. Such addition of a new LnSbSe selenide compound could provide the alternative material choices in addition to LnSbTe telluride materials.
- Journal
- Crystals
- Volume
- 12
- Issue
- 11
- Year
- 2022
- URL
- https://dx.doi.org/10.3390/cryst12111663
- ISBN/ISSN
- 2073-4352
- DOI
- 10.3390/cryst12111663