Modelling the formation of high aspect CdSe quantum wires: axial-growth versus oriented-attachment mechanisms

by Barnard, Amanda S.; Xu, Huifang; Li, Xiaochun; Pradhan, Narayan; Peng, Xiaogang

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Following the recent low temperature synthesis of high quality and single crystal CdSe quantum nanowires, we have used a thermodynamic model to investigate the plausibility of axial-growth and oriented-attachment formation mechanisms. Using surface energies for clean and alkylamine-passivated CdSe surfaces reported elsewhere by Manna et al ( 2005 J. Phys. Chem. B 109 6183), we have compared equilibrium and metastable shapes of CdSe nanowires as a function of aspect ratio and axial orientation for different degrees of surface passivation. In general, the theoretical results support the oriented-attachment of low aspect quantum dots or nanorods, followed by coalescence to form high aspect quantum wires.

Journal
Nanotechnology
Volume
17
Issue
22
Year
2006
Start Page
5707
ISBN/ISSN
0957-4484
DOI
10.1088/0957-4484/17/22/029