Semi-transparent quaternary oxynitride photoanodes on GaN underlayers

by Ma, Z. L.; Pietak, K.; Piatek, J.; DeMoulpied, J. R.; Rokicinska, A.; Kustrowski, P.; Dronskowski, R.; Zlotnik, S.; Coridan, R. H.; Slabon, A.

Conformal atomic layer deposition (ALD) technique is employed to make semi-transparent TaOxNy, providing the possibility to build semi-transparent oxy(nitride) heterojunction photoanodes on conductive substrates. A generalized approach was developed to manufacture semi-transparent quaternary metal oxynitrides on conductive substrates beyond semi-transparent binary Ta3N5 photoanodes aiming for wireless tandem photoelectrochemical (PEC) cells.

Journal
Chemical Communications
Volume
56
Issue
86
Year
2020
Start Page
13193-13196
URL
https://dx.doi.org/10.1039/d0cc04894a
ISBN/ISSN
1364-548X; 1359-7345
DOI
10.1039/d0cc04894a