Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template
- Title
- Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template
- Authors
- Kryvyi, SB; Lytvyn, PM; Kladko, VP; Stanchu, HV; Kuchuk, AV; Mazur, YI; Salamo, GJ; Li, SB; Kogutyuk, PP; Belyaev, AE
- Journal
- Journal of Vacuum Science and Technology B
- Volume
- 35
- Issue
- 6
- Year
- 2017
- URL
- http://avs.scitation.org/doi/abs/10.1116/1.4999468
- ISBN/ISSN
- 1071-1023
- DOI
- 10.1116/1.4999468
