Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (100) and (311)A GaAs surfaces
Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (100) and (311)A GaAs surfaces
Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (100) and (311)A GaAs surfaces
Authors
Lourenco,S. A.;Teodoro,M. D.;Gonzalez-Borrero,P. P.;Dias,I. F. L.;Duarte,J. L.;Marega,E., Jr.;Salamo,G. J.
Journal
Physica B-Condensed Matter
Volume
407
Issue
12
Year
2012
Start Page
2131
ISBN/ISSN
0921-4526
DOI
10.1016/j.physb.2012.02.020 ER
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