Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
Salamo, Gregory J.
- Title
- Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
- Authors
- Stanchu, H ; Kryvyi, S ; Margiotta, S ; Cook, M; Grant, J ; Tran, H ; Acharya, S ; de Oliveira, FM ; Mazur, Y ; Benamara, M ; King, CA ; Du, W ; Li, BH ; Salamo, G ; Yu, SQ
- Journal
- Journal of Physics D-Applied Physics
- Volume
- 57
- Issue
- 25
- Year
- 2024
- DOI
- 10.1088/1361-6463/ad365b