Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence
Salamo, Gregory J.
- Title
- Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence
- Authors
- Kumar, R; Saha, SK ; Kuchuk, A ; de Oliveira, FM ; Khiangte, KR ; Yu, SQ ; Mazur, YI ; Salamo, GJ
- Journal
- CRYSTAL GROWTH & DESIGN
- Volume
- 23
- Issue
- 10
- Year
- 2023
- DOI
- 10.1021/acs.cgd.3c00792