| Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics | ACS Applied Nano Materials | 2023 |
| Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure | Applied Physics Letters | 2023 |
| High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon | IEEE Journal of Quantum Electronics | 2023 |
| Electrically injected GeSn lasers with peak wavelength up to 2.7 mu m | PHOTONICS RESEARCH | 2022 |
| Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate | Journal of Luminescence | 2022 |
| Band Offsets of the MOCVD-Grown beta-(Al0.21Ga0.79)(2)O-3/beta-Ga2O3 (010) Heterojunction | ACS Applied Materials & Interfaces | 2022 |
| Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE) | Crystengcomm | 2022 |
| The Growth of Polarization Domains in Ultrathin Ferroelectric Films Seeded by the Tip of an Atomic Force Microscope | Nanoscale Research Letters | 2022 |
| High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors Magnetic field sensors | Journal of Electronic Packaging | 2022 |
| Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications | Journal of Physics D-Applied Physics | 2022 |
| Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures | Crystals | 2022 |
| Impact of Long-Term Annealing on Photoluminescence from Ge1-xSnx Alloys | CRYSTALS | 2021 |
| Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy | APPLIED PHYSICS LETTERS | 2021 |
| Growth kinetics and nanoscale structure-property relationships of InN nanostructures on GaN(0001) | APPLIED SURFACE SCIENCE | 2021 |
| Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field | ACS APPLIED ELECTRONIC MATERIALS | 2021 |
| Impact of Long-Term Annealing on Photoluminescence from Ge1-xSnx Alloys | CRYSTALS | 2021 |
| InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot | Solar Energy Materials and Solar Cells | 2021 |
| Photoluminescence characterization of wetting layer and carrier dynamics for coupled InGaAs/GaAs surface quantum dot pair structures | OPTICS EXPRESS | 2020 |
| X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2020 |
| Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate | APPLIED PHYSICS LETTERS | 2020 |
| Lateral carrier transfer for high density InGaAs/GaAs surface quantum dots | JOURNAL OF LUMINESCENCE | 2020 |
| Carrier dynamics and recombination in silicon doped InAs/GaAs quantum dot solar cells with AlAs cap layers | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2020 |
| Electrically injected GeSn lasers on Si operating up to 100 K | OPTICA | 2020 |
| An Effective Electric Dipole Model for Voltage-induced Gating Mechanism of Lysenin | SCIENTIFIC REPORTS | 2019 |
| Plasmonically-powered hot carrier induced modulation of light emission in a two-dimensional GaAs semiconductor quantum well | NANOSCALE | 2019 |
| Quantification of cellular associated graphene and induced surface receptor responses | NANOSCALE | 2019 |
| Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift | NANO RESEARCH | |
| Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect | APPLIED SURFACE SCIENCE | |
| Conductivity-Type Conversion in Self-Assembled GeSn Stripes on Ge/Si(100) under Electric Field | ACS APPLIED ELECTRONIC MATERIALS | |
| Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures | Optical Materials | |
